Bauelemente Transistoren


Bauelemente RF-Transfomer
BFR96TS-MBR Transistor SI9926BDY MOSFET, DUAL J310-MBR J111 N-Kanal JFET-Transistor Transistor MJE2955T Transistor MJE3055T RD00HVS1-101 RD01MUS1-101 RD70HVF1-101 abgekündigt RD02MUS1-101 RD06HHF1-101 RD06HVF1-101 RD07MVS1-101 RD100HHF1-501 RD15HVF1-101 RD16HHF1-101
#xs#2152;Bauelemente#Transistoren;bfr96; BFR96TS-MBR;0,95;19;bfr96.JPG;; BFR96TS-MBR si-n 15v 0.1a 5.5ghz 11db;;;1;;;;;;;;;;;;;;;;;; #xs#2064;Bauelemente#Transistoren;si9926;Transistor SI9926BDY MOSFET, DUAL ;3,90;19;SI9926.jpg;;Transistor SI9926BDY MOSFET, DUAL ;

MOSFET, DUAL NN SO-8, RoHS -konform:JA, Transistor type:MOSFET, Wandlerpolarität:N Channel (Dual), Spannung, Uds(V) max.:20V, Gehäusetyp:SO-8, Strom, Id Dauer-:6.2A, Ladung, Gate, n-Kanal:11nC, Pin, Zahl der:8, SMD-Baute

;;2;;;;;;;;;;;;;;;;;;#HI# #xs#2138;Bauelemente#Transistoren;J310; J310-MBR;0,49;19;j310.jpg;; J310-MBR n-fet 25v 60ma up<6.5v vh;;;3;;;;;;;;;;;;;;;;;;#LZnicht mehr lieferbar, Ersatz J111# #xs#2222;Bauelemente#Transistoren;J111;J111 N-Kanal JFET-Transistor ;0,49;19;j111.jpg;;Fairchild N-Kanal JFET-Transistor J111 20 mA, TO-92 3-pin;

Auszug aus dem Datenblatt:

J111-113 *MMBFJ111-113

Symbol Parameter Value Units

VDG Drain-Gate Voltage 35 V

VGS Gate-Source Voltage -35 V

IGF Forward Gate Current 50 mA

TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 ?C

Datenblatt:

;;4;;;;;;;;;;;;;;;;;;#LZsofort# #xs#2094;Bauelemente#Transistoren;mje2955;Transistor MJE2955T;5,75;19;mje2955.jpg;;MJE2955T TRANSISTOR, PNP TO-220;

TRANSISTOR, PNP TO-220, RoHS -konform:JA, Transistor, Typ:Power General Purpose, Wandlerpolarität:PNP, Gehäusetyp:TO-220 (SOT-78B), Spannung, Uceo(V):60V, Strom, Ic max.:10A, Leistung, Ptot:75W, hfe, min.:20, Strom, Ic

;;5;;;;;;;;;;;;;;;;;; #xs#2095;Bauelemente#Transistoren;mje3055;Transistor MJE3055T;6,90;19;mje2955.jpg;;MJE3055T TRANSISTOR, NPN TO-220;

TRANSISTOR, NPN TO-220, RoHS -konform:JA, Transistor, Typ:Power General Purpose, Wandlerpolarität:NPN, Gehäusetyp:TO-220 (SOT-78B), Spannung, Uceo(V):60V, Strom, Ic max.:10A, Leistung, Ptot:75W, hfe, min.:20, Strom, Ic

;;6;;;;;;;;;;;;;;;;;; #xs#2125;Bauelemente#Transistoren;rd00hvs1;RD00HVS1-101;1,95;19;rd00hvs1.JPG;;MOSFET Power Transistor 175MHz,0.5W;

RD00HVS1 is a MOS FET type transistor specifically

designed for VHF/UHF RF amplifiers applications.

FEATURES

High power gain

Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz

APPLICATION

For output stage of high power amplifiers in VHF/UHF

;;7;;;;;;;;;;;;;;;;;; #xs#2139;Bauelemente#Transistoren;rd01mus;RD01MUS1-101;2,30;19;rd00hvs1.JPG;;RD01MUS1-101 MOSFET Power Transistor 520MHz,1W;

High power gain:

Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz

•High Efficiency: 65%typ.

•Integrated gate protection diode

;;8;;;;;;;;;;;;;;;;;;#HI# #xs#2100;Bauelemente#Transistoren;rd70hvf1;RD70HVF1-101 abgekündigt;29,75;19;rd70hvf.JPG;;MOSFET Power Transistor, 175MHz70W 520MHz,50W;

DESCRIPTION

RD70HVF1 is a MOS FET type transistor specifically

designed for VHF/UHF High power amplifiers

applications.

FEATURES

High power and High Gain:

Pout>70W,Gp>10.6dB@Vdd=12.5V,f=175MHz

Pout>50W,Gp>7.0dB@Vdd=12.5V,f=520MHz

High Efficiency: 60%typ.on VHF Band

High Efficiency: 55%typ.on UHF Band

Datenblatt: finden sie im Downloadbereich!

;;9;;;;;;;;;;;;;;;;;;#LZnur solange der Vorrat reicht# #xs#2102;Bauelemente#Transistoren;rd02mus1;RD02MUS1-101;6,50;19;RD02MUS1.JPG;;RD02MUS1-101 MOSFET Power Transistor 175MHz,520MHz,2W;

DESCRIPTION

RD02MUS1 is a MOS FET type transistor

specifically designed for VHF/UHF RF po

-wer amplifiers applications.

FEATURES

High power gain:

Pout>2W,Gp>16dB

@Vdd=7.2V,f=175MHz,520MHz

High Efficiency:65%typ.(175MHz)

High Efficiency:65%typ.(520MHz)

Datenblatt: finden sie im Downloadbereich!

;;10;;;;;;;;;;;;;;;;;;#LZund Preis auf Anfrage# #xs#2103;Bauelemente#Transistoren;rd06hhf1;RD06HHF1-101 ;3,95;19;RD06HHF1.JPG;;RD06HHF1-101 RF MOSFET 6W 30MHz ;

DESCRIPTION

RD06HHF1 is a MOS FET type transistor specifically

designed for HF RF power amplifiers applications.

FEATURES

•High power gain:

Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz

;;11;;;;;;;;;;;;;;;;;; #xs#2104;Bauelemente#Transistoren;rd06hvf1;RD06HVF1-101;4,25;19;RD06HVF1.JPG;;RD06HVF1-101 MOSFET Power Transistor 175MHz,6W;

RD06HVF1 is a MOS FET type transistor specifically

designed for VHF RF power amplifiers applications.

FEATURES

High power gain:

Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

;;12;;;;;;;;;;;;;;;;;; #xs#2105;Bauelemente#Transistoren;rd07mvs1;RD07MVS1-101;9,48;19;RD07MVS1.JPG;;RD07MVS1 Power Transistor,175MHz,520MHz,7W;

RD07MVS1 is a MOS FET type transistor

specifically designed for VHF/UHF RF

power amplifiers applications.

FEATURES

High power gain:

Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz

High Efficiency: 60%typ. (175MHz)

High Efficiency: 55%typ. (520MHz)

;;13;;;;;;;;;;;;;;;;;; #xs#2106;Bauelemente#Transistoren;rd100hhf1;RD100HHF1-501 ;25,50;19;RD100HHF1.JPG;;RD100HHF1-101 Power Transistor 30MHz,100W;

DESCRIPTION

RD100HHF1 is a MOS FET type transistor specifically

designed for HF High power amplifiers applications.

FEATURES

•High power and High Gain:

Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz

•High Efficiency: 60%typ.on HF Band

APPLICATION

For output stage of high power amplifiers in HF

Band mobile radio sets.

;;14;;j;;;;;;;;;;;;;;;;# #xs#2107;Bauelemente#Transistoren;rd15hvf1;RD15HVF1-101;9,50;19;RD15HVF1.JPG;;RD15HVF1 Power Transistor, 175MHz520MHz,15W Auf Anfrage auch als Paar ;

RD15HVF1 is a MOS FET type transistor specifically

designed for VHF/UHF High power amplifiers applications.

FEATURES

High power and High Gain:

Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz

Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz

High Efficiency: 60%typ. on VHF Band

High Efficiency: 55%typ. on UHF Band

APPLICATION

For output stage of high power amplifiers in VHF/UHF

Band mobile radio sets

;;15;;;;;;;;;;;;;;;;;;# #xs#2108;Bauelemente#Transistoren;rd16hhf1;RD16HHF1-101;4,95;19;RD16HHF1.JPG;;RD16HHF1-101 Power Transistor 30MHz,16W Auf Anfrage auch als Paar ;

DESCRIPTION

RD16HHF1 is a MOS FET type transistor specifically

designed for HF RF power amplifiers applications.

FEATURES

High power gain:

Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz

;;16;;j;;;;;;;;;;;;;;;;#MEStck.#LZsofort# ">